Type

Digital display and direct key
 setting

Bar display and adjuster setting

Standard models

Standard
 models

High-speed
 detection
 models

Water-resistant
 models

Model

E3X-SD[]

E3X-NA[]

E3X-NA[]F

E3X-NA[]V

Light source
 (wavelength)

Red, 4-element LED (625 nm)

Red,
 4-element
 LED (624 nm)

Red,
 4-element
 LED (625 nm)

Red LED (680 nm)

Power supply voltage

12 to 24 VDC ±10%, ripple (p-p): 10% max.

Power consumption/
 Current consumption

At Power Supply Voltage of 24 VDC
 960 mW max./40 mA max.
 At Power Supply Voltage of 12 VDC
 960 mW max./80 mA max.

At Power Supply Voltage of 24 VDC
 840 mW max./35 mA max.
 At Power Supply Voltage of 12 VDC
 420 mW max./35 mA max.

Control output

Open-collector output (NPN or PNP)
 Load power supply: 26.4 V max.,
 Load current: 50 mA max.
 (Residual voltage: 1.5 V max.)
 Light-ON/Dark-ON mode selector

Open-collector output (NPN or PNP)
 Load power supply: 26.4 V max.,
 Load current: 50 mA max.
 (Residual voltage: 1 V max.)
 Light-ON/Dark-ON mode selector.

Response time

Operate or reset: 200 μs max. *1

Operate:
 20 μs max.
 Reset:
 30 μs max.

Operate or reset:
 200 μs max. *1

Sensitivity adjustment

UP/DOWN direct key setting,
 teaching with/without a workpiece,
 automatic teaching

8-turn sensitivity adjuster (with indicator)

Protection circuits

Power supply reverse polarity
 protection,
 output short-circuit protection,
 output reverse polarity protection

Power supply reverse polarity protection,
 output short-circuit protection

Timer function

---

No timer, OFF-delay timer; or Timer selector
 (timer time: 40 ms (fixed))

Mutual interference
 prevention

Up to 5 Amplifiers (optically synchronized) *2

None

Up to 5 Amplifiers
 (optically
 synchronized) *2

Ambient illumination

Receiver side
 Incandescent lamp: 10,000 lux max.
 Sunlight: 20,000 lux max.

Number of gang-
 mounted Amplifiers

16 max. (The ambient temperature specification depends on the number of gang-mounted
 Amplifiers.)

Ambient temperature
 range

Operating: Groups of 1 to 3 Amplifiers: - 25 °C to 55 °C
 Groups of 4 to 11 Amplifiers: - 25 °C to 50 °C
 Groups of 12 to 16 Amplifiers: - 25 °C to 45 °C
 Storage: - 30 °C to 70 °C (with no icing or condensation)

Ambient humidity range

Operating and storage: 35% to 85%
 (with no condensation)

Operating: 35% to 85%
 Storage: 35% to 95%
 (with no condensation)

Insulation resistance

20 MΩ. min. (at 500 VDC)

Dielectric strength

1,000 VAC at 50/60 Hz for 1 minute *3

Vibration resistance

Destruction: 10 to 55 Hz with a 1.5-mm double amplitude for 2 hours each in X, Y and Z
 directions

Shock resistance

Destruction: 500 m/s², for 3 times each in X, Y and Z directions

Degree of protection

IEC 60529 IP50 (with Protective Cover attached)

IEC 60529 IP66
 (with Protective
 Cover attached)

Connection method

Pre-wired (standard cable length: 2 m), or connector

Weight (packed state) *4

Pre-wired model: Approx. 100 g, Model with connector: Approx. 55 g

Material

Case

Polybutylene terephthalate (PBT)

Cover

Polycarbonate (PC)

Polyethersulfone
 (PES)

Accessories

Instruction manual

Model

E3X-CN11

E3X-CN12

Rated current

2.5 A

Rated voltage

50 V

Contact resistance

20 mΩ max. (20 mVDC max., 100 mA max.)
 (The above figure is for connection to the Fiber Amplifier Unit and the adjacent Connector. It
 does not include the conductor resistance of the cable.)

Number of insertions

Destruction: 50 times (for connection to the Fiber Amplifier Unit and the adjacent Connector)

Material

Housing

Polybutylene terephthalate (PBT)

Contact

Phosphor bronze/gold-plated nickel

Weight (packed state)

Approx. 55 g

Approx. 25 g

Detection method

Sensing direction

Size

Model

Sensing distance (mm)

E3X-SD[]
 E3X-NA[]

E3X-NA[]F

E3X-NA[]V

Through-beam

Right-angle

M4

E32-T11N 2M

530

160

280

E32-LT11N 2M

1,800

600

900

Straight

E32-T11R 2M

560

160

280

E32-LT11 2M

2,100

700

1,050

E32-LT11R 2M

1,800

600

900

Reflective

Right-angle

M3

E32-C31N 2M

25

7.5

13

E32-C21N 2M

65

21

32

M4

E32-D21N 2M

170

56

85

M6

E32-C11N 2M

170

50

85

E32-LD11N 2M

170

56

85

Straight

M3

E32-D21R 2M

30

10

15

E32-C31 2M

80

26

40

E32-C31M 1M

M4

E32-D211R 2M

30

10

15

M6

E32-D11R 2M

180

60

90

E32-CC200 2M

300

100

150

E32-LD11 2M

180

60

90

E32-LD11R 2M

170

56

85

Detection method

Size

Sensing direction

Model

Sensing distance (mm)

E3X-SD[]
 E3X-NA[]

E3X-NA[]F

E3X-NA[]V

Through-beam

1 dia.

Top-view

E32-T223R 2M

120

36

60

1.5 dia.

E32-T22B 2M

200

60

100

3 dia.

E32-T12R 2M

560

160

280

Side-view

E32-T14LR 2M

220

66

110

Reflective

1.5 dia.

Top-view

E32-D22B 2M

30

10

15

1.5 dia. + 0.5 dia.

E32-D43M 1M

6

2

3

3 dia.

E32-D22R 2M

30

10

15

E32-D221B 2M

70

20

35

E32-D32L 2M

160

50

80

3 dia. + 0.8 dia.

E32-D33 2M

16

4

10

Detection method

Sensing direction

Model

Sensing distance (mm)

E3X-SD[]
 E3X-NA[]

E3X-NA[]F

E3X-NA[]V

Through-beam

Top-view

E32-T15XR 2M

560

160

280

Side-view

E32-T15YR 2M

220

66

110

Flat-view

E32-T15ZR 2M

Reflective

Top-view

E32-D15XR 2M

180

60

90

Side-view

E32-D15YR 2M

40

10

20

Flat-view

E32-D15ZR 2M

Detection method

Sensing direction

Model

Sensing distance (mm)

E3X-SD[]
 E3X-NA[]

E3X-NA[]F

E3X-NA[]V

Through-beam

Side-view

E32-T24R 2M

60

18

30

E32-T24E 2M

180

36

60

Top-view

E32-T21-S1 2M

130

43

65

E32-T33 1M

40

13.5

20

E32-TC200BR 2M

560

160

280

Reflective

Side-view

E32-D24R 2M

14

4.6

7

E32-D24-S2 2M

26

8

13

Top-view

E32-D43M 1M

6

2

3

E32-D331 2M

3

1

1.5

E32-D33 2M

16

4

10

E32-D32-S1 0.5M

14

4

7

E32-D31-S1 0.5M

E32-DC200F4R 2M

30

10

15

E32-D22-S1 2M

57

19

28

E32-D21-S3 2M

E32-DC200BR 2M

180

60

90

E32-D25-S3 2M

57

19

28

Type

Spot
 diameter

Center distance
 (mm)

Model

Sensing distance (mm)

E3X-SD[]
 E3X-NA[]

E3X-NA[]F

E3X-NA[]V

Variable
 spot

0.1 to
 0.6 dia.

6 to 15

E32-C42 1M + E39-F3A

Spot diameter of 0.1 to 0.6 mm at 6 to 15 mm.

0.3 to
 1.6 dia.

10 to 30

E32-C42 1M + E39-F17

Spot diameter of 0.3 to 1.6 mm at 10 to 30 mm.

Parallel
 light

4 dia.

0 to 20

E32-C31 2M + E39-F3C

Spot diameter of 4 mm max. at 0 to 20 mm.

E32-C31N 2M + E39-F3C

Integrated
 lens

0.1 dia.

5

E32-C42S 1M

Spot diameter of 0.1 mm at 5 mm.

6 dia.

50

E32-L15 2M

Spot diameter of 6 mm at 50 mm.

Small-
 spot

0.1 dia.

7

E32-C41 1M + E39-F3A-5

Spot diameter of 0.1 mm at 7 mm.

0.5 dia.

E32-C31 2M + E39-F3A-5

Spot diameter of 0.5 mm at 5 mm.

E32-C31N 2M + E39-F3A-5

0.2 dia.

17

E32-C41 1M + E39-F3B

Spot diameter of 0.2 mm at 17 mm.

0.5 dia.

E32-C31 2M + E39-F3B

Spot diameter of 0.5 mm at 17 mm.

E32-C31N 2M + E39-F3B

3 dia.

50

E32-CC200 2M + E39-F18

Spot diameter of 3 mm at 50 mm.

E32-C11N 2M + E39-F18

Type

Sensing
 direction

Aperture
 angle

Model

Sensing distance (mm)

E3X-SD[]
 E3X-NA[]

E3X-NA[]F

E3X-NA[]V

Through-beam
 Integrated lens

Right-angle

15°

E32-LT11N 2M

1,800

600

900

Top-view

10°

E32-T17L 10M

20,000 *1

8,400

14,000

15°

E32-LT11 2M

2,100

700

1,050

15°

E32-LT11R 2M

1,800

600

900

Side-view

30°

E32-T14 2M

3,600

1,080

1,800

Through-beam
 models with
 lenses

Right-angle

12°

E32-T11N 2M + E39-F1

3,700

1,110

2,100

6°

E32-T11N 2M + E39-F16

4,000 *2

2,000

3,600

Top-view

12°

E32-T11R 2M + E39-F1

4,000 *2

1,260

2,100

6°

E32-T11R 2M + E39-F16

4,000 *2

2,000

3,600

Side-view

60°

E32-T11R 2M + E39-F2

440

130

220

Top-view

12°

E32-T11 2M + E39-F1

4,000 *2

1,200

2,000

6°

E32-T11 2M + E39-F16

4,000 *2

2,600

4,000 *2

Side-view

60°

E32-T11 2M + E39-F2

720

200

360

Top-view

12°

E32-T51R 2M + E39-F1

2,000

720

1,650

6°

E32-T51R 2M + E39-F16

4,000 *2

1,560

2,900

Side-view

60°

E32-T51R 2M + E39-F2

360

120

200

Top-view

12°

E32-T81R-S 2M + E39-F1

1,800

630

1,100

6°

E32-T81R-S 2M + E39-F16

4,000 *2

1,300

2,300

Side-view

60°

E32-T81R-S 2M + E39-F2

280

84

140

Top-view

12°

E32-T61-S 2M + E39-F1

4,000 *2

1,800

3,000

6°

E32-T61-S 2M + E39-F16

4,000 *2

2,340

3,900

Side-view

60°

E32-T61-S 2M + E39-F2

780

260

390

Top-view

12°

E32-T51 2M + E39-F1-33

2,400

720

1,400

6°

E32-T51 2M + E39-F16

4,000 *2

3,120

4,000 *2

Reflective
 Integrated lens

Top-view

4°

E32-D16 2M

800

140

40 to 400

Detection method

Sensing
 direction

Aperture angle

Model

Sensing distance (mm)

E3X-SD[]
 E3X-NA[]

E3X-NA[]F

E3X-NA[]V

Through-beam

Side-view

1.5°

E32-A03 2M

890

267

445

E32-A03-1 2M

3.4°

E32-A04 2M

340

102

170

4°

E32-T24SR 2M

1170

360

600

E32-T24S 2M

1400

420

700

E32-T22S 2M

2000

600

1000

Detection
 method

Sensing
 direction

Model

Sensing distance (mm)

E3X-SD[]
 E3X-NA[]

E3X-NA[]F

E3X-NA[]V

Limited-
 reflective

Flat-view

E32-L16-N 2M

0 to 15

0 to 12

0 to 15

E32-L24S 2M

0 to 4

Side-view

E32-L25L 2M

5.4 to 9 (center 7.2)

5.4 to 8 (center 7.2)

5.4 to 9 (center 7.2)

Detection
 method

Feature

Size

Model

Sensing distance (mm)

E3X-SD[]
 E3X-NA[]

E3X-NA[]F

E3X-NA[]V

Retroreflective
 Sensors

Film detection

M3

E32-C31 2M +
 E39-F3R + E39-RP37

220

50

75

Square

-

E32-R16 2M

1,500

1,000

150 to 1,500

Threaded Models

M6

E32-R21 2M

10 to 250

250

10 to 250

Hex-shaped

E32-LR11NP 2M +
 E39-RP1

600

200

300

Detection
 method

Feature

Sensing
 direction

Model

Sensing distance (mm)

E3X-SD[]
 E3X-NA[]

E3X-NA[]F

E3X-NA[]V

Retro-
 reflective

Small size

Flat-view

E32- L24S 2M

0 to 4

Standard

E32-L16-N 2M

0 to 15

0 to 12

0 to 15

Glass substrate
 alignment, 70°C

E32-A08 2M

10 to 20

Standard/
 long-distance

E32-A12 2M

12 to 30

-

-

Side view form

Side-view

E32-L25L 2M

5.4 to 9
 (center 7.2)

5.4 to 8
 (center 7.2)

5.4 to 9
 (center 7.2)

Glass substrate
 mapping, 70°C

Top-view

E32-A09 2M

15 to 38 (center 25)

Detection
 method

Type

Sensing
 direction

Model

Sensing distance (mm)

E3X-SD[]
 E3X-NA[]

E3X-NA[]F

E3X-NA[]V

Through-
 beam

Oil-resistant

Right-angle

E32-T11NF 2M

4,000 *

1,400

2,400

Chemical/
 oil-resistant

Top-view

E32-T12F 2M

3,200

960

1,600

E32-T11F 2M

2,100

760

1,050

Side-view

E32-T14F 2M

400

120

200

Chemical/oil-
 resistant at 150°C

Top-view

E32-T51F 2M

1,400

400

700

Reflective

Semiconductors:
 Cleaning, developing,
 and etching; 60°C

Top-view

E32-L11FP 2M

8 to 20 mm from tip of lens (Recommended sensing
 distance: 11 mm), 19 to 31 mm from center of
 mounting hole A (Recommended sensing distance:
 22 mm)

Semiconductors:
 Resist stripping;
 85°C

E32-L11FS 2M

8 to 20 mm from tip of lens (Recommended sensing
 distance: 11 mm), 32 to 44 mm from center of
 mounting hole A (Recommended sensing distance:
 35 mm)

Chemical/
 oil-resistant

E32-D12F 2M

100

32

50

Chemical-resistant
 cable

E32-D11U 2M

180

60

90

Detection method

Size

Model

Sensing distance (mm)

E3X-SD[]
 E3X-NA[]

E3X-NA[]F

E3X-NA[]V

Through-beam

1.5 dia.

E32-T22B 2M

200

60

100

M3

E32-T21 2M

M4

E32-T11 2M

720

200

360

Square

E32-T25XB 2M

150

40

75

Reflective

1.5 dia.

E32-D22B 2M

30

10

15

M3

E32-D21 2M

3 dia.

E32-D221B 2M

70

20

35

M4

E32-D21B 2M

M6

E32-D11 2M

180

60

90

Square

E32-D25XB 2M

50

16

25

Detection method

Heat-resistant temperature

Model

Sensing distance (mm)

E3X-SD[]
 E3X-NA[]

E3X-NA[]F

E3X-NA[]V

Through-beam

100°C

E32-T51R 2M

400

120

225

150°C

E32-T51 2M

800

240

400

200°C

E32-T81R-S 2M

360

100

180

350°C

E32-T61-S 2M

600

180

300

Reflective

100°C

E32-D51R 2M

140

42

70

150°C

E32-D51 2M

240

80

120

200°C

E32-D81R 2M

90

27

45

300°C

E32-A08H2 2M

10 to 20

E32-A09H2 2M

20 to 30 (center 25)

350°C

E32-D61 2M

90

27

45

400°C

E32-D73 2M

60

18

30

Detection method

Type

Sensing width

Model

Sensing distance (mm)

E3X-SD[]
 E3X-NA[]

E3X-NA[]F

E3X-NA[]V

Through-beam

Area

11 mm

E32-T16PR 2M

800

260

450

E32-T16JR 2M

700

220

390

30 mm

E32-T16WR 2M

1380

400

690

Reflective

Array

11 mm

E32-D36P1 2M

150

50

75

Detection
 method

Pipe
 diameter

Feature

Model

Sensing distance (mm)

E3X-SD[]
 E3X-NA[]

E3X-NA[]F

E3X-NA[]V

Tube-mounting

3.2/6.4/
 9.5 dia.

Stable residual
 quantity detection

E32-A01 5M

Applicable tube: Transparent tube with a diameter
 of 3.2, 6.4, or 9.5 mm, Recommended wall
 thickness: 1 mm

8 to 10 dia.

Mounting at multi
 levels

E32-L25T 2M

Applicable tube: Transparent tube with a diameter
 of 8 to 10 mm, Recommended wall thickness:
 1 mm

No re-
 strictions

Large tubes

E32-D36T 2M

Applicable tube: Transparent tube (no restrictions
 on diameter)

Liquid contact
 (heat-resistant
 up to 200°C)

-

-

E32-D82F1 4M

Liquid-contact model

Detection method

Heat-resistant
 temperature

Model

Sensing distance (mm)

E3X-SD[]
 E3X-NA[]

E3X-NA[]F

E3X-NA[]V

Through-beam

120°C

E32-T51V 1M

200

-

100

E32-T51V 1M + E39-F1V

1200

-

600

200°C

E32-T84SV 1M

500

-

250

Detection
 method

Application

Operating
 temperature

Model

Sensing distance (mm)

E3X-SD[]
 E3X-NA[]

E3X-NA[]F

E3X-NA[]V

Limited-
 reflective

Glass presence
 detection

70°C

E32-L16-N 2M

0 to 15

0 to 12

0 to 15

Glass substrate
 alignment

E32-A08 2M

10 to 20

300°C

E32-A08H2 2M

70°C

E32-A12 2M

12 to 30

-

-

Glass substrate
 mapping

E32-A09 2M

15 to 38 (center 25)

300°C

E32-A09H2 2M

20 to 30 (center 25)

Wet processes:
 Cleaning, Resist
 developing and
 etching

60°C

E32-L11FP 2M

8 to 20 mm from tip of lens (Recommended sensing
 distance: 11 mm), 19 to 31 mm from center of
 mounting hole A (Recommended sensing distance:
 22 mm)

Wet process:
 Resist stripping

85°C

E32-L11FS 2M

8 to 20 mm from tip of lens (Recommended sensing
 distance: 11 mm), 32 to 44 mm from center of
 mounting hole A (Recommended sensing distance:
 35 mm)

Through-
 beam

Wafer mapping

70°C

E32-A03 2M

890

267

445

E32-A03-1 2M

E32-A04 2M

340

102

170

E32-T24SR 2M

1170

360

600

E32-T24S 2M

1400

420

700