Wafer-carrier Mounting Photomicrosensors

EE-SPY801 / 802

Photomicrosensors for detecting wafer-carrier mounting.

Models

EE- SPY801/802

Sensing distance
 (Standard sensing object)

0 to 5 mm ( White paper: 15 × 15 mm2, reflection factor: 90%)
0 to 3 mm ( Black paper: 15 × 15 mm2, reflection factor: 10%)

Sensing object

Transparent or opaque wafer carriers

Operation indicator

Lit orange when object is detected.

Light source

GaAs infrared LED with a peak wavelength of 940 nm

Supply voltage

12 to 24 VDC ±10%, ripple (p-p): 5% max.

Current consumption

30 mA max.

Control output

NPN open collector:
 Load power supply voltage: 5 to 24 VDC
 Load current: 100 mA max.
 OFF current: 0.5 mA max.
 100 mA load current with a residual voltage of 0.8 V max.
 40 mA load current with a residual voltage of 0.4 V max.

Response time

5 ms max.

Ambient illumination

3,000 lx max. with incandescent light or sunlight on the surface of the receiver

Ambient temperature range

Operating: - 10 to +55 ° C
 Storage: - 25 to +65 ° C (with no icing)

Ambient humidity range

Operating: 5% to 85%
 Storage: 5% to 95% (with no condensation)

Vibration resistance

Destruction: 1 to 500 Hz, 1.0-mm single amplitude or 150 m/s2 each in X, Y, and Z directions
 3 times and for 11 min. each

Shock resistance

Destruction: 500 m/s2 for 3 times each in X, Y, and Z directions

Degree of protection

IEC IP30

Connecting method

Pre-wired (Standard length: 2 m)

Weight (packaged)

Sensor: Approx. 43 g; Accessory (Pedestal): Approx. 9 g

Material

Case

Ethylene tetrafluoro ethylene (ETFE)

Base plate

Polybutylene phthalate (PBT)

Accessories

Instruction Manual