Product Category

Slot-type Reflective Photomicrosensor

EE-SPX301 / 401, EE-SPY30 / 40

Photomicrosensor with light modulation is not influenced by external light.

Sensing method

Through-beam type (with slot)

Reflective type


EE-SPX301, EE-SPX401

EE-SPY301, EE-SPY401
 EE-SPY302, EE-SPY402

Sensing distance

3.6 mm (slot width)

5 mm (Reflection factor: 90%; white paper
 15 × 15 mm) *1

Sensing object

Opaque: 1 × 0.5 mm min.


Differential distance

0.05 mm max.

0.2 mm max.
 (with a sensing distance of 3 mm, horizontally)

Light source

GaAs infrared LED with a peak wavelength of 940 nm

Indicator *2

Light indicator (red)

Supply voltage

5 to 24 VDC ±10%, ripple (p-p): 5% max.

Current consumption

Average: 15 mA max., Peak: 50 mA max.

Control output

NPN voltage output:
 Load power supply voltage: 5 to 24 VDC
 Load current: 80 mA max.
 OFF current: 0.5 mA max.
 80 mA load current with a residual voltage of 1.0 V max.
 10 mA load current with a residual voltage of 0.4 V max.

Response frequency *3

500 Hz min.

100 Hz min.

Ambient illumination

3,000 lx max. with incandescent light or sunlight on the surface of the receiver

Ambient temperature

Operating: - 10 to +55 ° C
 Storage: - 25 to +65 ° C (with no icing)

Ambient humidity range

Operating: 5% to 85%
 Storage: 5% to 95% (with no condensation)

Vibration resistance

Destruction: 10 to 55 Hz, 1.5-mm double amplitude for 2 h each in X, Y, and Z directions

Shock resistance

Destruction: 500 m/s2 for 3 times each in X, Y, and Z directions

Degree of protection


Connecting method

Special connector (soldering not possible)


Approx. 2.6 g




1. Operation may not be possible near the Sensor.
 2. The indicator is a GaP red LED (peak wavelength: 700 nm).
 3. The response frequency was measured by detecting the following rotating disk.