Model: EE-SX670P
Brand: OMRON
Photo micro sensor, slot type, standard shape, L-ON/D-ON selectable, PNP, connector
| Type | Grooved Type (Standard) | |
|---|---|---|
| Luminous method | Non-modulated | |
| Sensing method | Through-beam type | |
| Sensing distance | Slot width: 5 mm | |
| Operation mode | Dark-ON/Light-ON (selectable) | |
| Standard sensing object | Opaque, 2 x 0.8 mm min. | |
| Differential distance elements | 0.025 mm max. | |
| Light source （Peak wavelength） | Infrared LED (940 nm) | |
| Indicator | Light indicator (red) | |
| Power supply voltage | 5 to 24 VDC ±10% ripple (p-p) 10 % max. |
|
| Current consumption | 12 mA (L terminal open) | |
| Control output | Output type | PNP open collector output |
| Load power supply voltage | 5 to 24 VDC | |
| Load curren | 50 mA max. | |
| Residual voltage | at 50 mA load current: 1.3 V max. | |
| Protection circuits | Output short-cut protection | |
| Response frequency elements | 1 kHz min. Average value: 3 kHz |
|
| Illumination on the surface receiver | Fluorescent light: 1000 lx max. | |
| Ambient temperature | Operating: -25 to 55 ℃ (with no freezing or condensation) Storage: -30 to 80 ℃ (with no freezing or condensation) |
|
| Ambient humidity | Operating: 5 to 85 % (with no condensation) Storage: 5 to 95 % (with no condensation) |
|
| Vibration resistance | Destruction: 20 to 2000 Hz, peak acceleration 100 m/s2, 1.5-mm double amplitude 2 h each in X, Y, and Z directions (4 min periods) | |
| Shock resistance | Destruction: 500 m/s2 for 3 times each in X, Y, and Z directions | |
| Degree of protection | IP50 | |
| Connection method | Connector type (Direct soldering possible) | |
| Weight | Package: Approx. 3.1 g | |
| Material | Case: Polybutylene terephthalate (PBT) Emitter/Receiver Cover: Polycarbonate (PC) |
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